JPH0341978B2 - - Google Patents
Info
- Publication number
- JPH0341978B2 JPH0341978B2 JP56191267A JP19126781A JPH0341978B2 JP H0341978 B2 JPH0341978 B2 JP H0341978B2 JP 56191267 A JP56191267 A JP 56191267A JP 19126781 A JP19126781 A JP 19126781A JP H0341978 B2 JPH0341978 B2 JP H0341978B2
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- semiconductor layer
- substrate
- plasma
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191267A JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191267A JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892217A JPS5892217A (ja) | 1983-06-01 |
| JPH0341978B2 true JPH0341978B2 (en]) | 1991-06-25 |
Family
ID=16271694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56191267A Granted JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892217A (en]) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468653A (en) * | 1982-08-24 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US5391893A (en) * | 1985-05-07 | 1995-02-21 | Semicoductor Energy Laboratory Co., Ltd. | Nonsingle crystal semiconductor and a semiconductor device using such semiconductor |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JPS59115574A (ja) | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPH06105794B2 (ja) * | 1983-10-18 | 1994-12-21 | 株式会社半導体エネルギー研究所 | 炭化珪素半導体作製方法 |
| JPS59165468A (ja) * | 1983-03-10 | 1984-09-18 | Shin Etsu Chem Co Ltd | 太陽電池用窓枠材の製造方法 |
| JPS60130822A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 発光半導体装置の作製方法 |
| JPS60130821A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS60154521A (ja) * | 1984-01-23 | 1985-08-14 | Semiconductor Energy Lab Co Ltd | 炭化珪素被膜作製方法 |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JPS62113482A (ja) * | 1985-11-12 | 1987-05-25 | Sanyo Electric Co Ltd | 光起電力装置 |
| US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
| JPH01212478A (ja) * | 1988-02-19 | 1989-08-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| KR950013784B1 (ko) * | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JP2814161B2 (ja) | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
| US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| JP3571404B2 (ja) * | 1995-03-03 | 2004-09-29 | アネルバ株式会社 | プラズマｃｖｄ装置及びその場クリーニング後処理方法 |
| US5599732A (en) * | 1995-08-21 | 1997-02-04 | Northwestern University | Method for growing III-V semiconductor films using a coated reaction chamber |
| US6020035A (en) | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
| TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
| US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
| KR101455304B1 (ko) | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| JP5311957B2 (ja) | 2007-10-23 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| JP5311955B2 (ja) | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| TWI481029B (zh) | 2007-12-03 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR101523353B1 (ko) | 2007-12-03 | 2015-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터 및 반도체 장치 |
| EP2073255B1 (en) | 2007-12-21 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device comprising the diode |
| JP5416460B2 (ja) | 2008-04-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび薄膜トランジスタの作製方法 |
| WO2009128522A1 (en) | 2008-04-18 | 2009-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| WO2009128553A1 (en) | 2008-04-18 | 2009-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
| JP5542364B2 (ja) | 2008-04-25 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| CN102077331B (zh) | 2008-06-27 | 2014-05-07 | 株式会社半导体能源研究所 | 薄膜晶体管 |
| US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP5498762B2 (ja) | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| WO2010103906A1 (en) | 2009-03-09 | 2010-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP5888802B2 (ja) | 2009-05-28 | 2016-03-22 | 株式会社半導体エネルギー研究所 | トランジスタを有する装置 |
| TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138237A (en) * | 1979-04-13 | 1980-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
-
1981
- 1981-11-28 JP JP56191267A patent/JPS5892217A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5892217A (ja) | 1983-06-01 |
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